Electron-ion recombination ofSiIVformingSiIII: Storage-ring measurement and multiconfiguration Dirac-Fock calculations
نویسندگان
چکیده
منابع مشابه
Storage-ring measurement and multiconfiguration Dirac-Fock calculations
The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavyion storage-ring TSR. The experimental electron-ion collision energy range of 0–186 eV encompassed the 2p nl n′l′ dielectronic recombination (DR) resonances associated with 3s→ nl core excitations, 2s 2p 3s nl n′l′ resonances associated with 2s → nl (n = 3, 4) core excitations, and 2p 3s nl n′l′ re...
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ژورنال
عنوان ژورنال: Physical Review A
سال: 2007
ISSN: 1050-2947,1094-1622
DOI: 10.1103/physreva.76.032717